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PECVD
Plasma Enhanced Chemical Vapor Deposition (PECVD) for the production of thin, functional layers. In the PECVD process, the gaseous or liquid precursors (e.g. HMDSO) are activated by RF excitation. Favoured by the plasma, layers can be deposited at low temperatures (room temperature). Thus, materials with tailored properties can be deposited on temperature sensitive substrates such as polymers.
Examples:
- transparent conductive oxides (TCO)
- inert protective layers (SiOx, SiNx)
Surface Activation
Surface activation prior bonding has the advantage that no intermediate bonding layer is needed and sufficiently high bonding energy is achieved. Typically this is achieved as low temperatures. In most cases no activation is needed when coating with Parylene, however we have several processes available should it be required by the substrate.
Surface Preparation
Our advanced cleaning technology is ideal for preparing parts for a subsequent coating such as Parylene.
In many cases residual solder flux and other contamination can affect the quality and life of a Parylene coating. We will often recommend cleaning circuit boards to maximise their service life.
Plasma deposited coatings have many applications:
Wear resistance of precision parts
Coating of medical implants and surgical instruments with biocompatible carbon coatings
Deposition of diffusion proof carbon coatings on plastics
Attachment of therapeutic substances on carbon coated implant surfaces
Functional coatings in micro electronics
Our current plasma technologies include:
PVD (Physical Vapour Deposition) processes
CVD (Chemical Vapour Deposition) processes
PECVD (Plasma Enhanced Chemical Vapour Deposition) processes
SiO
Surface activation prior bonding has the advantage that no intermediate bonding layer is needed and sufficiently high bonding energy is achieved. Typically this is achieved as low temperatures. In most cases no activation is needed when coating with Parylene, however we have several processes available should it be required by the substrate.
